Reliability Evaluation for Integrated Circuit with Defective Interconnect under Electromigration
نویسنده
چکیده
In electromigration degradation process the existing physical defects on interconnect play a critical role by significantly accelerating the EM damage under increased current density and elevated temperature. In this work the simulation models were upgraded in the IC reliability simulator ARET to incorporate the effect of interconnect physical defects in expected lifetime prediction. Then based on the statistical approach, a probability model was developed to evaluate the systemlevel circuit reliability with defective interconnect under EM degradation. The probability model has been successfully implemented in ARET tool to simulate and evaluate both interconnect and circuit level reliabilities.
منابع مشابه
Design tool and methodologies for interconnect reliability analysis in integrated circuits
Total on-chip interconnect length has been increasing exponentially with technology scaling. Consequently, interconnect-driven design is an emerging trend in state-ofthe-art integrated circuits. Cu-based interconnect technology is expected to meet some of the challenges of technology scaling. However, Cu interconnects still pose a reliability concern due to electromigration-induced failure over...
متن کاملA Statistical Circuit Optimization Algorithm under Thermal and Timing Constraints
Process Variation has become a crucial challenge on both interconnect delay and reliability of nanometer integrated circuit designs. Furthermore, the dramatic increase of power consumption and integration density has led to high operating temperature. Temperature, as well as electromigration (EM) and power, also significantly affects the delay and reliability of interconnects. Considering proce...
متن کاملTCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps
For the realization of modern integrated circuits new interconnect structures like through-silicon-vias and solder bumps, together with complex multilevel 3D interconnect structures are gaining importance. The application of these new structures unavoidably rises different reliability issues like thermal gradients, electromigration, and stressmigration. In this paper we apply state-of-the art T...
متن کاملImpact of Non-blocking Vias on Electromigration and Circuit-level Reliability Assessments of Cu Interconnects
In Cu metallization, refractory metal liners at vias generally block electromigration. As liner thicknesses are decreased, fully-blocking liners at vias become less certain due to liner ruptures. We have developed and exercised a reliability CAD tool, SysRel, for circuit-level interconnect reliability assessments, and used it to assess the impact of non-blocking vias on circuit-level reliabilit...
متن کاملHigh-Speed Driven Technological Improvements Impact on Interconnect Thermal Reliability in VLSI Circuits
The complexity of huge-scale integrated circuits allowed by technology scaling down breeds design problems for the diÆculty in managing deep-submicron drawbacks. Thermal e ects have increasing impact on power supply bus reliability, and e ective line sizing based on trustable lifetime evaluation is of basic importance. This work presents an analysis of the impact on electromigration of technolo...
متن کامل